EPC2100ENGRT

Part NumberEPC2100ENGRT

ManufacturerEPC

DescriptionGANFET 2 N-CH 30V 9.5A/38A DIE

DatasheetEPC2100 Datasheet

Package / CaseDie

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Lead TimeTo be Confirmed

Detailed DescriptionMosfet Array 2 N-Channel (Half Bridge) 30V 10A (Ta), 40A (Ta) Surface Mount Die

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EPC2100ENGRT - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays
Datasheet	EPC2100 Datasheet
Standard Package	1
Manufacturer	EPC
Series	eGaN®
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	2 N-Channel (Half Bridge)
FET Feature	GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25°C	10A (Ta), 40A (Ta)
Rds On (Max) @ Id, Vgs	8.2mOhm @ 25A, 5V, 2.1mOhm @ 25A, 5V
Vgs(th) (Max) @ Id	2.5V @ 4mA, 2.5V @ 16mA
Gate Charge (Qg) (Max) @ Vgs	4.9nC @ 15V, 19nC @ 15V
Input Capacitance (Ciss) (Max) @ Vds	475pF @ 15V, 1960pF @ 15V
Power - Max	-
Operating Temperature	-40°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package / Case	Die
Supplier Device Package	Die

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