EPC2111ENGRT

Part NumberEPC2111ENGRT

ManufacturerEPC

DescriptionGAN TRANS ASYMMETRICAL HALF BRID

DatasheetEPC2111

Package / CaseDie

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionMosfet Array 2 N-Channel (Half Bridge) 30V 16A (Ta) Surface Mount Die

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EPC2111ENGRT - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays

Datasheet

EPC2111

Standard Package

1000

Manufacturer

EPC

Series

Packaging

Tape & Reel (TR)

Part Status

Active

FET Type

2 N-Channel (Half Bridge)

FET Feature

GaNFET (Gallium Nitride)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

16A (Ta)

Rds On (Max) @ Id, Vgs

19mOhm @ 15A, 5V, 8mOhm @ 15A, 5V

Vgs(th) (Max) @ Id

2.5V @ 5mA

Gate Charge (Qg) (Max) @ Vgs

2.2nC @ 5V, 5.7nC @ 5V

Input Capacitance (Ciss) (Max) @ Vds

230pF @ 15V, 590pF @ 15V

Power - Max

Operating Temperature

-40°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

Die

Supplier Device Package

Die

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