DMN4800LSSQ-13

Part NumberDMN4800LSSQ-13

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Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	DMN4800LSSQ
Standard Package	2500
Manufacturer	Diodes Incorporated
Series	Automotive, AEC-Q101
Packaging	Tape & Reel (TR)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25°C	8.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	14mOhm @ 9A, 10V
Vgs(th) (Max) @ Id	1.6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	8.7nC @ 5V
Vgs (Max)	±25V
Input Capacitance (Ciss) (Max) @ Vds	798pF @ 10V
FET Feature	-
Power Dissipation (Max)	1.46W (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	8-SO
Package / Case	8-SOIC (0.154", 3.90mm Width)

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TPW4R008NH,L1Q	Toshiba Semiconductor and Storage, N-Channel 80V 116A (Tc) 800mW (Ta), 142W (Tc) Surface Mount 8-DSOP Advance, U-MOSVIII-H	View
IRFR310TRLPBF	Vishay Siliconix, N-Channel 400V 1.7A (Tc) 2.5W (Ta), 25W (Tc) Surface Mount D-Pak,	View
IPP60R125C6XKSA1	Infineon Technologies, N-Channel 600V 30A (Tc) 219W (Tc) Through Hole PG-TO220-3, CoolMOS™	View
FDD86250-F085	ON Semiconductor, N-Channel 150V 50A (Tc) 160W (Tj) Surface Mount TO-252, (D-Pak), Automotive, AEC-Q101, PowerTrench®	View