DMN1032UCB4-7
DMN1032UCB4-7
Part Number DMN1032UCB4-7
Description MOSFET N-CH 12V 4.8A U-WLB1010-4
Package / Case 4-UFBGA, WLBGA
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Lead Time To be Confirmed
Detailed Description N-Channel 12V 4.8A (Ta) 900mW (Ta) Surface Mount U-WLB1010-4
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DMN1032UCB4-7 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet DMN1032UCB4
Standard Package 1
Manufacturer Diodes Incorporated
Series -
Packaging Cut Tape (CT)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 12V
Current - Continuous Drain (Id) @ 25°C 4.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Rds On (Max) @ Id, Vgs 26mOhm @ 1A, 4.5V
Vgs(th) (Max) @ Id 1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 4.5nC @ 4.5V
Vgs (Max) ±8V
Input Capacitance (Ciss) (Max) @ Vds 450pF @ 6V
FET Feature -
Power Dissipation (Max) 900mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package U-WLB1010-4
Package / Case 4-UFBGA, WLBGA
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