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DMG4800LK3-13

DMG4800LK3-13

Part NumberDMG4800LK3-13

ManufacturerDiodes Incorporated

DescriptionMOSFET N-CH 30V 10A TO252

DatasheetDMG4800LK3

Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 30V 10A (Ta) 1.71W (Ta) Surface Mount TO-252-3

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DMG4800LK3-13 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	DMG4800LK3
Standard Package	1
Manufacturer	Diodes Incorporated
Series	-
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25°C	10A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	17mOhm @ 9A, 10V
Vgs(th) (Max) @ Id	1.6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	8.7nC @ 5V
Vgs (Max)	±25V
Input Capacitance (Ciss) (Max) @ Vds	798pF @ 10V
FET Feature	-
Power Dissipation (Max)	1.71W (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	TO-252-3
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63

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