DMG3415UFY4Q-7
DMG3415UFY4Q-7
Part Number DMG3415UFY4Q-7 Description MOSFET P-CH 16V 2.5A X2-DFN2015 Package / Case 3-XDFNUnit Price Request a QuoteLead Time To be ConfirmedDetailed Description P-Channel 16V 2.5A (Ta) 650mW (Ta) Surface Mount X2-DFN2015-3
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DMG3415UFY4Q-7 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet DMG3415UFY4Q Standard Package 1 Manufacturer Diodes Incorporated Series - Packaging Cut Tape (CT) Part Status Active FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 16V Current - Continuous Drain (Id) @ 25°C 2.5A (Ta) Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V Rds On (Max) @ Id, Vgs 39mOhm @ 4A, 4.5V Vgs(th) (Max) @ Id 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs 10nC @ 4.5V Vgs (Max) ±8V Input Capacitance (Ciss) (Max) @ Vds 282pF @ 10V FET Feature - Power Dissipation (Max) 650mW (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package X2-DFN2015-3 Package / Case 3-XDFN
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