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DMG3415UFY4Q-7

DMG3415UFY4Q-7

Part NumberDMG3415UFY4Q-7

ManufacturerDiodes Incorporated

DescriptionMOSFET P-CH 16V 2.5A X2-DFN2015

DatasheetDMG3415UFY4Q

Package / Case3-XDFN

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionP-Channel 16V 2.5A (Ta) 650mW (Ta) Surface Mount X2-DFN2015-3

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DMG3415UFY4Q-7 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	DMG3415UFY4Q
Standard Package	1
Manufacturer	Diodes Incorporated
Series	-
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	16V
Current - Continuous Drain (Id) @ 25°C	2.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	1.8V, 4.5V
Rds On (Max) @ Id, Vgs	39mOhm @ 4A, 4.5V
Vgs(th) (Max) @ Id	1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	10nC @ 4.5V
Vgs (Max)	±8V
Input Capacitance (Ciss) (Max) @ Vds	282pF @ 10V
FET Feature	-
Power Dissipation (Max)	650mW (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	X2-DFN2015-3
Package / Case	3-XDFN

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DMG3415UFY4Q-7 - Tags

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