Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ NTLJS3113PT1G

NTLJS3113PT1G

NTLJS3113PT1G

Part NumberNTLJS3113PT1G

ManufacturerON Semiconductor

DescriptionMOSFET P-CH 20V 3.5A 6WDFN

DatasheetNTLJS3113P

Package / Case6-WDFN Exposed Pad

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionP-Channel 20V 3.5A (Ta) 700mW (Ta) Surface Mount 6-WDFN (2x2)

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NTLJS3113PT1G - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	NTLJS3113P
Standard Package	1
Manufacturer	ON Semiconductor
Series	µCool™
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25°C	3.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	1.5V, 4.5V
Rds On (Max) @ Id, Vgs	40mOhm @ 3A, 4.5V
Vgs(th) (Max) @ Id	1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	15.7nC @ 4.5V
Vgs (Max)	±8V
Input Capacitance (Ciss) (Max) @ Vds	1329pF @ 16V
FET Feature	-
Power Dissipation (Max)	700mW (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	6-WDFN (2x2)
Package / Case	6-WDFN Exposed Pad

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