CSD25211W1015
CSD25211W1015
Part Number CSD25211W1015
Description MOSFET P-CH 20V 3.2A 6DSBGA
Package / Case 6-UFBGA, DSBGA
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Lead Time To be Confirmed
Detailed Description P-Channel 20V 3.2A (Ta) 1W (Ta) Surface Mount 6-DSBGA (1x1.5)
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CSD25211W1015 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet CSD25211W1015 Datasheet
Standard Package 1
Manufacturer Texas Instruments
Series NexFET™
Packaging Cut Tape (CT)
Part Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 3.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Rds On (Max) @ Id, Vgs 33mOhm @ 1.5A, 4.5V
Vgs(th) (Max) @ Id 1.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 4.1nC @ 4.5V
Vgs (Max) -6V
Input Capacitance (Ciss) (Max) @ Vds 570pF @ 10V
FET Feature -
Power Dissipation (Max) 1W (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 6-DSBGA (1x1.5)
Package / Case 6-UFBGA, DSBGA
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