CSD17313Q2
CSD17313Q2
Part Number CSD17313Q2
Description MOSFET N-CH 30V 5A 6SON
Package / Case 6-WDFN Exposed Pad
Unit Price Request a Quote
Lead Time To be Confirmed
Detailed Description N-Channel 30V 5A (Tc) 2.3W (Ta) Surface Mount 6-WSON (2x2)
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CSD17313Q2 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet CSD17313Q2
Standard Package 1
Manufacturer Texas Instruments
Series NexFET™
Packaging Cut Tape (CT)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 3V, 8V
Rds On (Max) @ Id, Vgs 30mOhm @ 4A, 8V
Vgs(th) (Max) @ Id 1.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 2.7nC @ 4.5V
Vgs (Max) +10V, -8V
Input Capacitance (Ciss) (Max) @ Vds 340pF @ 15V
FET Feature -
Power Dissipation (Max) 2.3W (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 6-WSON (2x2)
Package / Case 6-WDFN Exposed Pad
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