CSD16411Q3


CSD16411Q3

Part NumberCSD16411Q3

Manufacturer

Description

Datasheet

Package / Case8-PowerVDFN

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed Description

CSD16411Q3 - Product Attributes

Categories Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet
Standard Package1
ManufacturerTexas Instruments
SeriesNexFET™
PackagingCut Tape (CT)
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)25V
Current - Continuous Drain (Id) @ 25°C14A (Ta), 56A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs10mOhm @ 10A, 10V
Vgs(th) (Max) @ Id2.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs3.8nC @ 4.5V
Vgs (Max)+16V, -12V
Input Capacitance (Ciss) (Max) @ Vds570pF @ 12.5V
FET Feature-
Power Dissipation (Max)2.7W (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package8-VSON (3.3x3.3)
Package / Case8-PowerVDFN

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