2N7002-T1-E3
2N7002-T1-E3
Part Number 2N7002-T1-E3
Description MOSFET N-CH 60V 115MA SOT23
Package / Case TO-236-3, SC-59, SOT-23-3
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Lead Time To be Confirmed
Detailed Description N-Channel 60V 115mA (Ta) 200mW (Ta) Surface Mount TO-236
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2N7002-T1-E3 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet 2N7000,02,VQ1000J/P,BS170 Datasheet
Standard Package 1
Manufacturer Vishay Siliconix
Series -
Packaging Cut Tape (CT)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 115mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V
Rds On (Max) @ Id, Vgs 7.5Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 50pF @ 25V
FET Feature -
Power Dissipation (Max) 200mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-236
Package / Case TO-236-3, SC-59, SOT-23-3
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