CDM22010-650 SL
CDM22010-650 SL
Part Number CDM22010-650 SL Description MOSFET N-CH 10A 650V TO220 Package / Case TO-220-3Unit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 650V 10A (Ta) 2W (Ta), 156W (Tc) Through Hole TO-220
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CDM22010-650 SL - Product Attributes
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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet CDM22010-650 Standard Package 50 Manufacturer Central Semiconductor Corp Series - Packaging Tube Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 650V Current - Continuous Drain (Id) @ 25°C 10A (Ta) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 1Ohm @ 5A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 20nC @ 10V Vgs (Max) 30V Input Capacitance (Ciss) (Max) @ Vds 1168pF @ 25V FET Feature - Power Dissipation (Max) 2W (Ta), 156W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220 Package / Case TO-220-3
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