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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet BUK(95,96,9E)08-55B
Standard Package 1
Manufacturer Nexperia USA Inc.
Series Automotive, AEC-Q101, TrenchMOS™
Packaging Cut Tape (CT)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 55V
Current - Continuous Drain (Id) @ 25°C 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V
Rds On (Max) @ Id, Vgs 7mOhm @ 25A, 10V
Vgs(th) (Max) @ Id 2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 45nC @ 5V
Vgs (Max) ±15V
Input Capacitance (Ciss) (Max) @ Vds 5280pF @ 25V
FET Feature -
Power Dissipation (Max) 203W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D2PAK
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
TSM3N80CP ROG
Taiwan Semiconductor Corporation, N-Channel 800V 3A (Tc) 94W (Tc) Surface Mount TO-252, (D-Pak),
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FDMC3020DC
ON Semiconductor, N-Channel 30V 17A (Ta), 40A (Tc) 3W (Ta), 50W (Tc) Surface Mount Dual Cool ™ 33, Dual Cool™, PowerTrench®
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NTLJS4114NT1G
ON Semiconductor, N-Channel 30V 3.6A (Ta) 700mW (Ta) Surface Mount 6-WDFN (2x2), µCool™
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PSMN017-30BL,118
Nexperia USA Inc., N-Channel 30V 32A (Tc) 47W (Tc) Surface Mount D2PAK,
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IRFBC40PBF
Vishay Siliconix, N-Channel 600V 6.2A (Tc) 125W (Tc) Through Hole TO-220AB,
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BSS123LT1G
ON Semiconductor, N-Channel 100V 170mA (Ta) 225mW (Ta) Surface Mount SOT-23-3 (TO-236),
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FQPF27N25
ON Semiconductor, N-Channel 250V 14A (Tc) 55W (Tc) Through Hole TO-220F, QFET®
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IPA60R125CFD7XKSA1
Infineon Technologies, N-Channel 600V 11A (Tc) 32W (Tc) Through Hole PG-TO220 Full Pack, OptiMOS™
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IRFP350PBF
Vishay Siliconix, N-Channel 400V 16A (Tc) 190W (Tc) Through Hole TO-247-3,
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FDMS86180
ON Semiconductor, N-Channel 100V 151A (Tc) 138W (Tc) Surface Mount Power56, PowerTrench®
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FQD19N10TM
ON Semiconductor, N-Channel 100V 15.6A (Tc) 2.5W (Ta), 50W (Tc) Surface Mount D-Pak, QFET®
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PSMN004-60B,118
Nexperia USA Inc., N-Channel 60V 75A (Tc) 230W (Tc) Surface Mount D2PAK, TrenchMOS™
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