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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet BUK(95,96,9E)08-55B
Standard Package 800
Manufacturer Nexperia USA Inc.
Series Automotive, AEC-Q101, TrenchMOS™
Packaging Tape & Reel (TR)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 55V
Current - Continuous Drain (Id) @ 25°C 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V
Rds On (Max) @ Id, Vgs 7mOhm @ 25A, 10V
Vgs(th) (Max) @ Id 2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 45nC @ 5V
Vgs (Max) ±15V
Input Capacitance (Ciss) (Max) @ Vds 5280pF @ 25V
FET Feature -
Power Dissipation (Max) 203W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D2PAK
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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IRLI2910PBF
Infineon Technologies, N-Channel 100V 31A (Tc) 63W (Tc) Through Hole TO-220AB Full-Pak, HEXFET®
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DMN90H8D5HCT
Diodes Incorporated, N-Channel 900V 2.5A (Tc) 125W (Tc) Through Hole TO-220AB,
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SQJ148EP-T1_GE3
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IXYS, N-Channel 500V 55A (Tc) 625W (Tc) Chassis Mount SOT-227B, HiPerFET™
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IRFB4610PBF
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IRLR110PBF
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FCD600N60Z
ON Semiconductor, N-Channel 600V 7.4A (Tc) 89W (Tc) Surface Mount D-Pak, SuperFET® II
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CSD19533Q5AT
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SPW21N50C3FKSA1
Infineon Technologies, N-Channel 560V 21A (Tc) 208W (Tc) Through Hole PG-TO247-3, CoolMOS™
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DMTH6010LK3-13
Diodes Incorporated, N-Channel 60V 14.8A (Ta), 70A (Tc) 3.1W (Ta) Surface Mount TO-252, (D-Pak),
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