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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet BUK9608-55A
Standard Package 1
Manufacturer Nexperia USA Inc.
Series Automotive, AEC-Q101, TrenchMOS™
Packaging Cut Tape (CT)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 55V
Current - Continuous Drain (Id) @ 25°C 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 7.5mOhm @ 25A, 10V
Vgs(th) (Max) @ Id 2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 92nC @ 5V
Vgs (Max) ±15V
Input Capacitance (Ciss) (Max) @ Vds 6021pF @ 25V
FET Feature -
Power Dissipation (Max) 253W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D2PAK
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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BUK662R7-55C,118
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Microchip Technology, N-Channel 60V 230mA (Tj) 400mW (Ta), 1W (Tc) Through Hole TO-92-3,
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STMicroelectronics, N-Channel 650V 10A (Tc) 110W (Tc) Surface Mount DPAK, MDmesh™ DM2
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IRFR3910TRLPBF
Infineon Technologies, N-Channel 100V 16A (Tc) 79W (Tc) Surface Mount D-Pak, HEXFET®
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CSD18532NQ5B
Texas Instruments, N-Channel 60V 22A (Ta), 100A (Tc) 3.2W (Ta) Surface Mount 8-VSON-CLIP (5x6), NexFET™
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NTMTS0D6N04CLTXG
ON Semiconductor, N-Channel 40V 554.5A 5W,
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