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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet BUK9214-30A
Standard Package 2500
Manufacturer Nexperia USA Inc.
Series Automotive, AEC-Q101, TrenchMOS™
Packaging Tape & Reel (TR)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 63A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 12mOhm @ 25A, 10V
Vgs(th) (Max) @ Id 2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 31nC @ 5V
Vgs (Max) ±15V
Input Capacitance (Ciss) (Max) @ Vds 2317pF @ 25V
FET Feature -
Power Dissipation (Max) 107W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package DPAK
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
TK380P60Y,RQ
Toshiba Semiconductor and Storage, N-Channel 600V 9.7A (Tc) 30W (Tc) Surface Mount DPAK, DTMOSV
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APT58M80J
Microsemi Corporation, N-Channel 800V 60W (Tc) 960W (Tc) Chassis Mount SOT-227,
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FDP150N10A-F102
ON Semiconductor, N-Channel 100V 50A (Tc) 91W (Tc) Through Hole TO-220-3, PowerTrench®
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DMN61D8LQ-7
Diodes Incorporated, N-Channel 60V 470mA (Ta) 390mW (Ta) Surface Mount SOT-23,
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IPSA70R360P7SAKMA1
Infineon Technologies, N-Channel 700V 12.5A (Tc) 59.5W (Tc) Through Hole PG-TO251-3, CoolMOS™ P7
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IXTP3N100D2
IXYS, N-Channel 1000V 3A (Tc) 125W (Tc) Through Hole TO-220AB,
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SI4114DY-T1-GE3
Vishay Siliconix, N-Channel 20V 20A (Tc) 2.5W (Ta), 5.7W (Tc) Surface Mount 8-SO, TrenchFET®
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IRF6644TRPBF
Infineon Technologies, N-Channel 100V 10.3A (Ta), 60A (Tc) 2.8W (Ta), 89W (Tc) Surface Mount DIRECTFET™ MN, HEXFET®
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IXFX64N60Q3
IXYS, N-Channel 600V 64A (Tc) 1250W (Tc) Through Hole PLUS247™-3, HiPerFET™
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FDMC86570LET60
ON Semiconductor, N-Channel 60V 18A (Ta), 87A (Tc) 2.8W (Ta), 65W (Tc) Surface Mount Power33, PowerTrench®
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TK39A60W,S4VX
Toshiba Semiconductor and Storage, N-Channel 600V 38.8A (Ta) 50W (Tc) Through Hole TO-220SIS, DTMOSIV
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RFD14N05SM9A
ON Semiconductor, N-Channel 50V 14A (Tc) 48W (Tc) Surface Mount TO-252AA,
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