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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet BUK764R0-40E
Standard Package 1
Manufacturer Nexperia USA Inc.
Series Automotive, AEC-Q101, TrenchMOS™
Packaging Cut Tape (CT)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40V
Current - Continuous Drain (Id) @ 25°C 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 4mOhm @ 25A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 54nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 4405pF @ 25V
FET Feature -
Power Dissipation (Max) 182W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D2PAK
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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Rohm Semiconductor, N-Channel 30V 3A (Ta) 1W (Tc) Surface Mount TSMT3,
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Vishay Siliconix, N-Channel 500V 19A (Tc) 179W (Tc) Surface Mount D²PAK (TO-263),
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ON Semiconductor, N-Channel 30V 13A (Ta), 93A (Tc) 930mW (Ta), 48W (Tc) Surface Mount 5-DFN (5x6) (8-SOFL),
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ON Semiconductor, N-Channel 650V 30A (Tc) 240W (Tc) Through Hole TO-220FP, FRFET®, SuperFET® III
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2N7002LT1G
ON Semiconductor, N-Channel 60V 115mA (Tc) 225mW (Ta) Surface Mount SOT-23-3 (TO-236),
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IRFIB6N60APBF
Vishay Siliconix, N-Channel 600V 5.5A (Tc) 60W (Tc) Through Hole TO-220-3,
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