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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet BUK763R1-60E
Standard Package 1
Manufacturer Nexperia USA Inc.
Series Automotive, AEC-Q101, TrenchMOS™
Packaging Cut Tape (CT)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 3.1mOhm @ 25A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 114nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 8920pF @ 25V
FET Feature -
Power Dissipation (Max) 293W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D2PAK
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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BSZ900N20NS3GATMA1
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FQB4N80TM
ON Semiconductor, N-Channel 800V 3.9A (Tc) 3.13W (Ta), 130W (Tc) Surface Mount D²PAK (TO-263AB), QFET®
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SPB07N60C3ATMA1
Infineon Technologies, N-Channel 650V 7.3A (Tc) 83W (Tc) Surface Mount PG-TO263-3-2, CoolMOS™
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FDS8638
ON Semiconductor, N-Channel 40V 18A (Ta) 2.5W (Ta) Surface Mount 8-SOIC, PowerTrench®
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