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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet BUK761R7-40E
Standard Package 1
Manufacturer Nexperia USA Inc.
Series Automotive, AEC-Q101, TrenchMOS™
Packaging Cut Tape (CT)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40V
Current - Continuous Drain (Id) @ 25°C 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 1.6mOhm @ 25A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 118nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 9700pF @ 25V
FET Feature -
Power Dissipation (Max) 324W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D2PAK
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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FDS6670A
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SSM3K123TU,LF
Toshiba Semiconductor and Storage, N-Channel 20V 4.2A (Ta) 500mW (Ta) Surface Mount UFM, U-MOSIII
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IRF540ZLPBF
Infineon Technologies, N-Channel 100V 36A (Tc) 92W (Tc) Through Hole TO-262, HEXFET®
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SIS412DN-T1-GE3
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STD7N80K5
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SIHG25N40D-GE3
Vishay Siliconix, N-Channel 400V 25A (Tc) 278W (Tc) Through Hole TO-247AC,
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Texas Instruments, N-Channel 100V 50A (Ta) 3.2W (Ta), 63W (Tc) Surface Mount 8-VSONP (5x6), NexFET™
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RSF015N06FRATL
Rohm Semiconductor, N-Channel 60V 1.5A (Ta) 800mW (Ta) Surface Mount TUMT3, Automotive, AEC-Q101
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