Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SQJ412EP-T1_GE3

SQJ412EP-T1_GE3

SQJ412EP-T1_GE3

Part NumberSQJ412EP-T1_GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 40V 32A PPAK SO-8

DatasheetSQJ412EP

Package / CasePowerPAK® SO-8

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 40V 32A (Tc) 83W (Tc) Surface Mount PowerPAK® SO-8

To learn about the specification of SQJ412EP-T1_GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SQJ412EP-T1_GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SQJ412EP-T1_GE3.
We are offering SQJ412EP-T1_GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SQJ412EP-T1_GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SQJ412EP
Standard Package	1
Manufacturer	Vishay Siliconix
Series	Automotive, AEC-Q101, TrenchFET®
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	40V
Current - Continuous Drain (Id) @ 25°C	32A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	4.1mOhm @ 10.3A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	120nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	5950pF @ 20V
FET Feature	-
Power Dissipation (Max)	83W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® SO-8
Package / Case	PowerPAK® SO-8

SQJ412EP-T1_GE3 - Related Products

	IRL2203NSTRLPBF	Infineon Technologies, N-Channel 30V 116A (Tc) 3.8W (Ta), 180W (Tc) Surface Mount D2PAK, HEXFET®	View
	NX7002AKW,115	Nexperia USA Inc., N-Channel 60V 170mA (Ta) 220mW (Ta), 1.06W (Tc) Surface Mount SC-70,	View
	PSMN2R9-30MLC,115	Nexperia USA Inc., N-Channel 30V 70A (Tc) 91W (Tc) Surface Mount LFPAK33,	View
	CSD17581Q3AT	Texas Instruments, N-Channel 30V 60A (Tc) 2.8W (Ta), 63W (Tc) Surface Mount 8-VSONP (3x3.15), NexFET™	View
	2SK3018T106	Rohm Semiconductor, N-Channel 30V 100mA (Ta) 200mW (Ta) Surface Mount UMT3,	View
	IPB180N04S401ATMA1	Infineon Technologies, N-Channel 40V 180A (Tc) 188W (Tc) Surface Mount PG-TO263-7-3, OptiMOS™	View
	STO33N60M6	STMicroelectronics, N-Channel 600V 25A (Tc) 230W (Tc) Surface Mount TOLL (HV), MDmesh™ M6	View
	IRFR024NTRPBF	Infineon Technologies, N-Channel 55V 17A (Tc) 45W (Tc) Surface Mount D-Pak, HEXFET®	View
	TK10P60W,RVQ	Toshiba Semiconductor and Storage, N-Channel 600V 9.7A (Ta) 80W (Tc) Surface Mount DPAK, DTMOSIV	View
	SIRA10DP-T1-GE3	Vishay Siliconix, N-Channel 30V 60A (Tc) 5W (Ta), 40W (Tc) Surface Mount PowerPAK® SO-8, TrenchFET®	View
	FDD6N50TM-F085	ON Semiconductor, N-Channel 500V 6A (Tc) 89W (Tc) Surface Mount D-Pak, Automotive, AEC-Q101	View
	SISS32DN-T1-GE3	Vishay Siliconix, N-Channel 80V 17.4A (Ta), 63A (Tc) 5W (Ta), 65.7W (Tc) Surface Mount PowerPAK® 1212-8S (3.3x3.3), TrenchFET® Gen IV	View

SQJ412EP-T1_GE3 - Tags

SQJ412EP-T1_GE3 SQJ412EP-T1_GE3 PDF SQJ412EP-T1_GE3 datasheet SQJ412EP-T1_GE3 specification SQJ412EP-T1_GE3 image SQJ412EP-T1_GE3 India Renesas Electronics India SQJ412EP-T1_GE3 buy SQJ412EP-T1_GE3 SQJ412EP-T1_GE3 price SQJ412EP-T1_GE3 distributor SQJ412EP-T1_GE3 supplier SQJ412EP-T1_GE3 wholesales