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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet BUK7608-40B
Standard Package 1
Manufacturer Nexperia USA Inc.
Series Automotive, AEC-Q101, TrenchMOS™
Packaging Cut Tape (CT)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40V
Current - Continuous Drain (Id) @ 25°C 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 8mOhm @ 25A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 36nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2689pF @ 25V
FET Feature -
Power Dissipation (Max) 157W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D2PAK
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
SUD25N15-52-E3
Vishay Siliconix, N-Channel 150V 25A (Tc) 3W (Ta), 136W (Tc) Surface Mount TO-252, (D-Pak), TrenchFET®
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SQJA80EP-T1_GE3
Vishay Siliconix, N-Channel 80V 60A (Tc) 68W (Tc) Surface Mount PowerPAK® SO-8, Automotive, AEC-Q101, TrenchFET®
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IRL640SPBF
Vishay Siliconix, N-Channel 200V 17A (Tc) 3.1W (Ta), 125W (Tc) Surface Mount D2PAK,
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CSD13306W
Texas Instruments, N-Channel 12V 3.5A (Ta) 1.9W (Ta) Surface Mount 6-DSBGA (1x1.5), NexFET™
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BSC220N20NSFDATMA1
Infineon Technologies, N-Channel 200V 52A 214W (Tc) Surface Mount PG-TSON-8-3, OptiMOS™
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IXFH34N50P3
IXYS, N-Channel 500V 34A (Tc) 695W (Tc) Through Hole TO-247AD (IXFH), HiPerFET™, Polar3™
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IRF710STRLPBF
Vishay Siliconix, N-Channel 400V 2A (Tc) 3.1W (Ta), 36W (Tc) Surface Mount D2PAK,
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BSC079N10NSGATMA1
Infineon Technologies, N-Channel 100V 13.4A (Ta), 100A (Tc) 156W (Tc) Surface Mount PG-TDSON-8-1, OptiMOS™
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IRFZ44SPBF
Vishay Siliconix, N-Channel 60V 50A (Tc) 3.7W (Ta), 150W (Tc) Surface Mount D2PAK,
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ZXMN3B14FTA
Diodes Incorporated, N-Channel 30V 2.9A (Ta) 1W (Ta) Surface Mount SOT-23-3,
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STH80N10F7-2
STMicroelectronics, N-Channel 100V 80A (Tc) 110W (Tc) Surface Mount H2Pak-2, DeepGATE™, STripFET™ VII
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FCPF190N60
ON Semiconductor, N-Channel 600V 20.2A (Tc) 39W (Tc) Through Hole TO-220F, SuperFET® II
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