STB28N60DM2
STB28N60DM2
Part Number STB28N60DM2 Description MOSFET N-CH 600V 21A Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263ABUnit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 600V 21A (Tc) 170W (Tc) Surface Mount D2PAK
To learn about the specification of STB28N60DM2, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add STB28N60DM2 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of STB28N60DM2.
We are offering STB28N60DM2 for competitive price in the global market, please send us a quota request for pricing. Thank you!
Payment Methods
Delivery Services
STB28N60DM2 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet ST(B,P,W)28N60DM2 Standard Package 1 Manufacturer STMicroelectronics Series MDmesh™ DM2 Packaging Cut Tape (CT) Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 21A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 160mOhm @ 10.5A, 10V Vgs(th) (Max) @ Id 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 34nC @ 10V Vgs (Max) ±25V Input Capacitance (Ciss) (Max) @ Vds 1500pF @ 100V FET Feature - Power Dissipation (Max) 170W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package D2PAK Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
STB28N60DM2 - Related ProductsMore >>
IPP037N08N3GXKSA1 Infineon Technologies, N-Channel 80V 100A (Tc) 214W (Tc) Through Hole PG-TO220-3, OptiMOS™
View
NDT014L ON Semiconductor, N-Channel 60V 2.8A (Ta) 3W (Ta) Surface Mount SOT-223-4,
View
CSD17522Q5A Texas Instruments, N-Channel 30V 87A (Tc) 3W (Ta) Surface Mount 8-VSONP (5x6), NexFET™
View
BSC080N03LSGATMA1 Infineon Technologies, N-Channel 30V 14A (Ta), 53A (Tc) 2.5W (Ta), 35W (Tc) Surface Mount PG-TDSON-8-5, OptiMOS™
View
IRLR8256TRPBF Infineon Technologies, N-Channel 25V 81A (Tc) 63W (Tc) Surface Mount D-Pak, HEXFET®
View
R6007JNXC7G Rohm Semiconductor, N-Channel 600V 7A (Tc) 46W (Tc) Through Hole TO-220FM,
View
STP36N60M6 STMicroelectronics, N-Channel 600V 30A (Tc) 208W (Tc) Through Hole TO-220, MDmesh™ M6
View
STW38N65M5-4 STMicroelectronics, N-Channel 650V 30A (Tc) 190W (Tc) Through Hole TO-247-4L, MDmesh™ M5
View
RCX160N20 Rohm Semiconductor, N-Channel 200V 16A (Tc) 2.23W (Ta), 40W (Tc) Through Hole TO-220FM,
View
IRFR3411TRPBF Infineon Technologies, N-Channel 100V 32A (Tc) 130W (Tc) Surface Mount D-Pak, HEXFET®
View
IRFP260PBF Vishay Siliconix, N-Channel 200V 46A (Tc) 280W (Tc) Through Hole TO-247-3,
View
FCPF7N60NT ON Semiconductor, N-Channel 600V 6.8A (Tc) 30.5W (Tc) Through Hole TO-220F, SupreMOS™
View
STB28N60DM2 - Tags
English
