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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet BUK7210-55B
Standard Package 2500
Manufacturer Nexperia USA Inc.
Series Automotive, AEC-Q101, TrenchMOS™
Packaging Tape & Reel (TR)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 55V
Current - Continuous Drain (Id) @ 25°C 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 10mOhm @ 25A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 35nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2453pF @ 25V
FET Feature -
Power Dissipation (Max) 167W (Tc)
Operating Temperature -55°C ~ 185°C (TJ)
Mounting Type Surface Mount
Supplier Device Package DPAK
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
SI2312BDS-T1-GE3
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STB28N65M2
STMicroelectronics, N-Channel 650V 20A (Tc) 170W (Tc) Surface Mount D2PAK, MDmesh™ M2
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PSMN102-200Y,115
Nexperia USA Inc., N-Channel 200V 21.5A (Tc) 113W (Tc) Surface Mount LFPAK56, Power-SO8, TrenchMOS™
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ON Semiconductor, N-Channel 40V 300A (Tc) 429W (Tc) Surface Mount 8-HPSOF, Automotive, AEC-Q101, PowerTrench®
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TSM120N06LCP ROG
Taiwan Semiconductor Corporation, N-Channel 60V 70A (Tc) 125W (Tc) Surface Mount TO-252, (D-Pak),
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DMN2056U-7
Diodes Incorporated, N-Channel 20V 4A (Ta) 940mW Surface Mount SOT-23-3,
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FCPF190N60E
ON Semiconductor, N-Channel 600V 20.6A (Tc) 39W (Tc) Through Hole TO-220F, SuperFET® II
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Vishay Siliconix, N-Channel 650V 32.4A (Tc) 313W (Tc) Through Hole TO-247AC,
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Toshiba Semiconductor and Storage, N-Channel 600V 100A (Ta) 797W (Tc) Through Hole TO-3P(L), DTMOSIV
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STP75NS04Z
STMicroelectronics, N-Channel 33V 80A (Tc) 110W (Tc) Through Hole TO-220AB, MESH OVERLAY™ III
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SIHB12N60E-GE3
Vishay Siliconix, N-Channel 600V 12A (Tc) 147W (Tc) Surface Mount D2PAK,
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