SISA72ADN-T1-GE3
SISA72ADN-T1-GE3
Part Number SISA72ADN-T1-GE3
Description MOSFET N-CHAN 40-V POWERPAK 1212
Package / Case PowerPAK® 1212-8
Unit Price Request a Quote
Lead Time To be Confirmed
Detailed Description N-Channel 40V 25.4A (Ta), 94A (Tc) 3.7W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8
To learn about the specification of SISA72ADN-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SISA72ADN-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SISA72ADN-T1-GE3.
We are offering SISA72ADN-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!
Payment Methods
Delivery Services
SISA72ADN-T1-GE3 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet SISA72ADN
Standard Package 1
Manufacturer Vishay Siliconix
Series TrenchFET® Gen IV
Packaging Cut Tape (CT)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40V
Current - Continuous Drain (Id) @ 25°C 25.4A (Ta), 94A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 3.25mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 50nC @ 10V
Vgs (Max) +20V, -16V
Input Capacitance (Ciss) (Max) @ Vds 2530pF @ 20V
FET Feature -
Power Dissipation (Max) 3.7W (Ta), 52W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PowerPAK® 1212-8
Package / Case PowerPAK® 1212-8
SISA72ADN-T1-GE3 - Related ProductsMore >>
SI7460DP-T1-GE3
Vishay Siliconix, N-Channel 60V 11A (Ta) 1.9W (Ta) Surface Mount PowerPAK® SO-8, TrenchFET®
View
STD9N65M2
STMicroelectronics, N-Channel 650V 5A (Tc) 60W (Tc) Surface Mount DPAK, MDmesh™
View
SIR880DP-T1-GE3
Vishay Siliconix, N-Channel 80V 60A (Tc) 6.25W (Ta), 104W (Tc) Surface Mount PowerPAK® SO-8, TrenchFET®
View
IPB320N20N3GATMA1
Infineon Technologies, N-Channel 200V 34A (Tc) 136W (Tc) Surface Mount D²PAK (TO-263AB), OptiMOS™
View
FQT7N10LTF
ON Semiconductor, N-Channel 100V 1.7A (Tc) 2W (Tc) Surface Mount SOT-223-4, QFET®
View
RJK0855DPB-00#J5
Renesas Electronics America, N-Channel 80V 30A (Ta) 60W (Tc) Surface Mount LFPAK,
View
IXFP20N50P3M
IXYS, N-Channel 500V 8A (Tc) 58W (Tc) Through Hole TO-220AB, HiPerFET™, Polar3™
View
AUIRF3205ZSTRL
Infineon Technologies, N-Channel 55V 75A (Tc) 170W (Tc) Surface Mount D2PAK, HEXFET®
View
SIHP22N60EF-GE3
Vishay Siliconix, N-Channel 600V 19A (Tc) 179W (Tc) Through Hole TO-220AB, EF
View
STP28NM60ND
STMicroelectronics, N-Channel 600V 23A (Tc) 190W (Tc) Through Hole TO-220, FDmesh™ II
View
CSD13383F4
Texas Instruments, N-Channel 12V 2.9A (Ta) 500mW (Ta) Surface Mount 3-PICOSTAR, FemtoFET™
View
RQ3E080GNTB
Rohm Semiconductor, N-Channel 30V 8A (Ta) 2W (Ta), 15W (Tc) Surface Mount 8-HSMT (3.2x3),
View
SISA72ADN-T1-GE3 - Tags