BSS806NH6327XTSA1
BSS806NH6327XTSA1
Part Number BSS806NH6327XTSA1
Description MOSFET N-CH 20V 2.3A SOT23
Package / Case TO-236-3, SC-59, SOT-23-3
Unit Price Request a Quote
Lead Time To be Confirmed
Detailed Description N-Channel 20V 2.3A (Ta) 500mW (Ta) Surface Mount SOT-23-3
To learn about the specification of BSS806NH6327XTSA1, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add BSS806NH6327XTSA1 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of BSS806NH6327XTSA1.
We are offering BSS806NH6327XTSA1 for competitive price in the global market, please send us a quota request for pricing. Thank you!
Payment Methods
Delivery Services
BSS806NH6327XTSA1 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet BSS806N
Standard Package 1
Manufacturer Infineon Technologies
Series OptiMOS™
Packaging Cut Tape (CT)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 2.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 2.5V
Rds On (Max) @ Id, Vgs 57mOhm @ 2.3A, 2.5V
Vgs(th) (Max) @ Id 750mV @ 11µA
Gate Charge (Qg) (Max) @ Vgs 1.7nC @ 2.5V
Vgs (Max) ±8V
Input Capacitance (Ciss) (Max) @ Vds 529pF @ 10V
FET Feature -
Power Dissipation (Max) 500mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package SOT-23-3
Package / Case TO-236-3, SC-59, SOT-23-3
BSS806NH6327XTSA1 - Related ProductsMore >>
TSM4N60ECH C5G
Taiwan Semiconductor Corporation, N-Channel 600V 4A (Tc) 86.2W (Tc) Through Hole TO-251 (IPAK),
View
SQD07N25-350H_GE3
Vishay Siliconix, N-Channel 250V 7A (Tc) 71W (Tc) Surface Mount TO-252AA,
View
PSMN017-60YS,115
Nexperia USA Inc., N-Channel 60V 44A (Tc) 74W (Tc) Surface Mount LFPAK56, Power-SO8,
View
STP35NF10
STMicroelectronics, N-Channel 100V 40A (Tc) 115W (Tc) Through Hole TO-220AB, STripFET™ II
View
IRF7807ZTRPBF
Infineon Technologies, N-Channel 30V 11A (Ta) 2.5W (Ta) Surface Mount 8-SO, HEXFET®
View
STD2LN60K3
STMicroelectronics, N-Channel 600V 2A (Tc) 45W (Tc) Surface Mount DPAK, SuperMESH3™
View
PHB20N06T,118
Nexperia USA Inc., N-Channel 55V 20.3A (Tc) 62W (Tc) Surface Mount D2PAK, TrenchMOS™
View
TK35A65W5,S5X
Toshiba Semiconductor and Storage, N-Channel 650V 35A (Ta) 50W (Tc) Through Hole TO-220SIS, DTMOSIV
View
IXTQ130N10T
IXYS, N-Channel 100V 130A (Tc) 360W (Tc) Through Hole TO-3P, TrenchMV™
View
DMN4008LFG-7
Diodes Incorporated, N-Channel 40V 14.4A (Ta) 1W (Ta) Surface Mount PowerDI3333-8,
View
FDP24N40
ON Semiconductor, N-Channel 400V 24A (Tc) 227W (Tc) Through Hole TO-220-3, UniFET™
View
IXFN32N100Q3
IXYS, N-Channel 1000V 28A (Tc) 780W (Tc) Chassis Mount SOT-227B, HiPerFET™
View
BSS806NH6327XTSA1 - Tags