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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet STx7ANM60N
Standard Package 1000
Manufacturer STMicroelectronics
Series Automotive, AEC-Q101, MDmesh™ II
Packaging Tape & Reel (TR)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600V
Current - Continuous Drain (Id) @ 25°C 5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 900mOhm @ 2.5A, 10V
Vgs(th) (Max) @ Id 4V @ 250mA
Gate Charge (Qg) (Max) @ Vgs 14nC @ 10V
Vgs (Max) ±25V
Input Capacitance (Ciss) (Max) @ Vds 363pF @ 50V
FET Feature -
Power Dissipation (Max) 45W (Tc)
Operating Temperature 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D2PAK
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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Taiwan Semiconductor Corporation, N-Channel 600V 18A (Tc) 150.6W (Tc) Surface Mount TO-263 (D²Pak),
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FDD5670
ON Semiconductor, N-Channel 60V 52A (Ta) 3.8W (Ta), 83W (Tc) Surface Mount TO-252, PowerTrench®
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Diodes Incorporated, N-Channel 240V 500mA (Ta) 2.5W (Ta) Surface Mount SOT-223,
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