BSS806NEH6327XTSA1
BSS806NEH6327XTSA1
Part Number BSS806NEH6327XTSA1
Description MOSFET N-CH 20V 2.3A SOT23
Package / Case TO-236-3, SC-59, SOT-23-3
Unit Price Request a Quote
Lead Time To be Confirmed
Detailed Description N-Channel 20V 2.3A (Ta) 500mW (Ta) Surface Mount SOT-23-3
To learn about the specification of BSS806NEH6327XTSA1, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add BSS806NEH6327XTSA1 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of BSS806NEH6327XTSA1.
We are offering BSS806NEH6327XTSA1 for competitive price in the global market, please send us a quota request for pricing. Thank you!
Payment Methods
Delivery Services
BSS806NEH6327XTSA1 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet BSS806NE
Standard Package 1
Manufacturer Infineon Technologies
Series Automotive, AEC-Q101, HEXFET®
Packaging Cut Tape (CT)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 2.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 2.5V
Rds On (Max) @ Id, Vgs 57mOhm @ 2.3A, 2.5V
Vgs(th) (Max) @ Id 0.75V @ 11µA
Gate Charge (Qg) (Max) @ Vgs 1.7nC @ 2.5V
Vgs (Max) ±8V
Input Capacitance (Ciss) (Max) @ Vds 529pF @ 10V
FET Feature -
Power Dissipation (Max) 500mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package SOT-23-3
Package / Case TO-236-3, SC-59, SOT-23-3
BSS806NEH6327XTSA1 - Related ProductsMore >>
FDG327N
ON Semiconductor, N-Channel 20V 1.5A (Ta) 420mW (Ta) Surface Mount SC-88 (SC-70-6), PowerTrench®
View
IGLD60R070D1AUMA1
Infineon Technologies, N-Channel 600V 15A (Tc) 114W (Tc) Surface Mount PG-LSON-8-1, CoolGaN™
View
TSM3N80CP ROG
Taiwan Semiconductor Corporation, N-Channel 800V 3A (Tc) 94W (Tc) Surface Mount TO-252, (D-Pak),
View
IPP093N06N3GXKSA1
Infineon Technologies, N-Channel 60V 50A (Tc) 71W (Tc) Through Hole PG-TO220-3, OptiMOS™
View
IRF200B211
Infineon Technologies, N-Channel 200V 12A (Tc) 80W (Tc) Through Hole TO-220AB, HEXFET®, StrongIRFET™
View
R6009JNJGTL
Rohm Semiconductor, N-Channel 600V 9A (Tc) 125W (Tc) Surface Mount LPTS (D2PAK),
View
SI4840BDY-T1-GE3
Vishay Siliconix, N-Channel 40V 19A (Tc) 2.5W (Ta), 6W (Tc) Surface Mount 8-SO, TrenchFET®
View
IGOT60R070D1AUMA1
Infineon Technologies, N-Channel 600V 31A (Tc) 125W (Tc) Surface Mount PG-DSO-20-87, CoolGaN™
View
IPP100N08N3GXKSA1
Infineon Technologies, N-Channel 80V 70A (Tc) 100W (Tc) Through Hole PG-TO220-3, OptiMOS™
View
RD3S075CNTL1
Rohm Semiconductor, N-Channel 190V 7.5A (Tc) 52W (Tc) Surface Mount TO-252,
View
FDS6682
ON Semiconductor, N-Channel 30V 14A (Ta) 2.5W (Ta) Surface Mount 8-SOIC, PowerTrench®
View
STD2NK90Z-1
STMicroelectronics, N-Channel 900V 2.1A (Tc) 70W (Tc) Through Hole I-PAK, SuperMESH™
View
BSS806NEH6327XTSA1 - Tags