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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet BSS806NE
Standard Package 1
Manufacturer Infineon Technologies
Series Automotive, AEC-Q101, HEXFET®
Packaging Cut Tape (CT)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 2.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 2.5V
Rds On (Max) @ Id, Vgs 57mOhm @ 2.3A, 2.5V
Vgs(th) (Max) @ Id 0.75V @ 11µA
Gate Charge (Qg) (Max) @ Vgs 1.7nC @ 2.5V
Vgs (Max) ±8V
Input Capacitance (Ciss) (Max) @ Vds 529pF @ 10V
FET Feature -
Power Dissipation (Max) 500mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package SOT-23-3
Package / Case TO-236-3, SC-59, SOT-23-3
BSB028N06NN3GXUMA1
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