BSS308PEH6327XTSA1
BSS308PEH6327XTSA1
Part Number BSS308PEH6327XTSA1
Description MOSFET P-CH 30V 2A SOT23
Package / Case TO-236-3, SC-59, SOT-23-3
Unit Price Request a Quote
Lead Time To be Confirmed
Detailed Description P-Channel 30V 2A (Ta) 500mW (Ta) Surface Mount SOT-23-3
To learn about the specification of BSS308PEH6327XTSA1, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add BSS308PEH6327XTSA1 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of BSS308PEH6327XTSA1.
We are offering BSS308PEH6327XTSA1 for competitive price in the global market, please send us a quota request for pricing. Thank you!
Payment Methods
Delivery Services
BSS308PEH6327XTSA1 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet BSS308PE
Standard Package 3000
Manufacturer Infineon Technologies
Series OptiMOS™
Packaging Tape & Reel (TR)
Part Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 2A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 80mOhm @ 2A, 10V
Vgs(th) (Max) @ Id 2V @ 11µA
Gate Charge (Qg) (Max) @ Vgs 5nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 500pF @ 15V
FET Feature -
Power Dissipation (Max) 500mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package SOT-23-3
Package / Case TO-236-3, SC-59, SOT-23-3
BSS308PEH6327XTSA1 - Related ProductsMore >>
IRFR5410TRPBF
Infineon Technologies, P-Channel 100V 13A (Tc) 66W (Tc) Surface Mount D-Pak, HEXFET®
View
FDFMA2P853
ON Semiconductor, P-Channel 20V 3A (Ta) 1.4W (Ta) Surface Mount 6-MicroFET (2x2), PowerTrench®
View
TSM7P06CP ROG
Taiwan Semiconductor Corporation, P-Channel 60V 7A (Tc) 15.6W (Tc) Surface Mount TO-252, (D-Pak),
View
DMP3007SFG-7
Diodes Incorporated, P-Channel 30V 70A (Tc) 2.8W (Ta) Surface Mount PowerDI3333-8,
View
IPD50P04P413ATMA1
Infineon Technologies, P-Channel 40V 50A (Tc) 58W (Tc) Surface Mount PG-TO252-3-313, OptiMOS™
View
SQ1421EDH-T1_GE3
Vishay Siliconix, P-Channel 60V 1.6A (Tc) 3.3W (Tc) Surface Mount SC-70-6 (SOT-363), TrenchFET®
View
ZVP2106ASTZ
Diodes Incorporated, P-Channel 60V 280mA (Ta) 700mW (Ta) Through Hole E-Line (TO-92 compatible),
View
SI3429EDV-T1-GE3
Vishay Siliconix, P-Channel 20V 8A (Ta), 8A (Tc) 4.2W (Tc) Surface Mount 6-TSOP, TrenchFET®
View
PMCM4401VPEZ
Nexperia USA Inc., P-Channel 12V 3.9A (Ta) 400mW (Ta), 12.5W (Tc) Surface Mount 4-WLCSP (2x2),
View
SSM3J328R,LF
Toshiba Semiconductor and Storage, P-Channel 20V 6A (Ta) 1W (Ta) Surface Mount SOT-23F, U-MOSVI
View
SSM3J327R,LF
Toshiba Semiconductor and Storage, P-Channel 20V 3.9A (Ta) 1W (Ta) Surface Mount SOT-23F, U-MOSVI
View
IRF5210LPBF
Infineon Technologies, P-Channel 100V 38A (Tc) 3.1W (Ta), 170W (Tc) Through Hole TO-262, HEXFET®
View
BSS308PEH6327XTSA1 - Tags