Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SIS435DNT-T1-GE3

SIS435DNT-T1-GE3

SIS435DNT-T1-GE3

Part NumberSIS435DNT-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET P-CH 20V 30A 1212-8

DatasheetSIS435DNT

Package / CasePowerPAK® 1212-8

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionP-Channel 20V 30A (Tc) 3.7W (Ta), 39W (Tc) Surface Mount PowerPAK® 1212-8

To learn about the specification of SIS435DNT-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SIS435DNT-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SIS435DNT-T1-GE3.
We are offering SIS435DNT-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SIS435DNT-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SIS435DNT
Standard Package	1
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25°C	30A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	1.8V, 4.5V
Rds On (Max) @ Id, Vgs	5.4mOhm @ 13A, 4.5V
Vgs(th) (Max) @ Id	900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs	180nC @ 8V
Vgs (Max)	±8V
Input Capacitance (Ciss) (Max) @ Vds	5700pF @ 10V
FET Feature	-
Power Dissipation (Max)	3.7W (Ta), 39W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® 1212-8
Package / Case	PowerPAK® 1212-8

SIS435DNT-T1-GE3 - Related Products

	FQB34P10TM	ON Semiconductor, P-Channel 100V 33.5A (Tc) 3.75W (Ta), 155W (Tc) Surface Mount D²PAK (TO-263AB), QFET®	View
	DMP3036SFG-7	Diodes Incorporated, P-Channel 30V 8.7A (Ta) 950mW (Ta) Surface Mount PowerDI3333-8,	View
	RRQ045P03TR	Rohm Semiconductor, P-Channel 30V 4.5A (Ta) 600mW (Ta) Surface Mount TSMT6 (SC-95),	View
	DMP2088LCP3-7	Diodes Incorporated, P-Channel 20V 2.9A (Ta) 1.13W Surface Mount X2-DSN1006-3,	View
	VP2106N3-G	Microchip Technology, P-Channel 60V 250mA (Tj) 1W (Tc) Through Hole TO-92-3,	View
	AOD409	Alpha & Omega Semiconductor Inc., P-Channel 60V 26A (Tc) 2.5W (Ta), 60W (Tc) Surface Mount TO-252, (D-Pak),	View
	SI1021R-T1-GE3	Vishay Siliconix, P-Channel 60V 190mA (Ta) 250mW (Ta) Surface Mount SC-75A, TrenchFET®	View
	SSM3J35CT,L3F	Toshiba Semiconductor and Storage, P-Channel 20V 100mA (Ta) 100mW (Ta) Surface Mount CST3, π-MOSVI	View
	SUM55P06-19L-E3	Vishay Siliconix, P-Channel 60V 55A (Tc) 3.75W (Ta), 125W (Tc) Surface Mount TO-263 (D2Pak), TrenchFET®	View
	SI4447DY-T1-E3	Vishay Siliconix, P-Channel 40V 3.3A (Ta) 1.1W (Ta) Surface Mount 8-SO, TrenchFET®	View
	SI2305-TP	Micro Commercial Co, P-Channel 8V 4.1A (Ta) 350mW (Ta) Surface Mount SOT-23,	View
	SQJ433EP-T1_GE3	Vishay Siliconix, P-Channel 30V 75A (Tc) 83W (Tc) Surface Mount PowerPAK® SO-8, Automotive, AEC-Q101, TrenchFET®	View

SIS435DNT-T1-GE3 - Tags

SIS435DNT-T1-GE3 SIS435DNT-T1-GE3 PDF SIS435DNT-T1-GE3 datasheet SIS435DNT-T1-GE3 specification SIS435DNT-T1-GE3 image SIS435DNT-T1-GE3 India Renesas Electronics India SIS435DNT-T1-GE3 buy SIS435DNT-T1-GE3 SIS435DNT-T1-GE3 price SIS435DNT-T1-GE3 distributor SIS435DNT-T1-GE3 supplier SIS435DNT-T1-GE3 wholesales