Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SIS435DNT-T1-GE3

SIS435DNT-T1-GE3

SIS435DNT-T1-GE3

Part NumberSIS435DNT-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET P-CH 20V 30A 1212-8

DatasheetSIS435DNT

Package / CasePowerPAK® 1212-8

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionP-Channel 20V 30A (Tc) 3.7W (Ta), 39W (Tc) Surface Mount PowerPAK® 1212-8

To learn about the specification of SIS435DNT-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SIS435DNT-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SIS435DNT-T1-GE3.
We are offering SIS435DNT-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SIS435DNT-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SIS435DNT
Standard Package	1
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25°C	30A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	1.8V, 4.5V
Rds On (Max) @ Id, Vgs	5.4mOhm @ 13A, 4.5V
Vgs(th) (Max) @ Id	900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs	180nC @ 8V
Vgs (Max)	±8V
Input Capacitance (Ciss) (Max) @ Vds	5700pF @ 10V
FET Feature	-
Power Dissipation (Max)	3.7W (Ta), 39W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® 1212-8
Package / Case	PowerPAK® 1212-8

SIS435DNT-T1-GE3 - Related Products

	SI7431DP-T1-GE3	Vishay Siliconix, P-Channel 200V 2.2A (Ta) 1.9W (Ta) Surface Mount PowerPAK® SO-8, TrenchFET®	View
	BSS84PWH6327XTSA1	Infineon Technologies, P-Channel 60V 150mA (Ta) 300mW (Ta) Surface Mount PG-SOT323-3, SIPMOS®	View
	SPB18P06PGATMA1	Infineon Technologies, P-Channel 60V 18.7A (Ta) 81.1W (Ta) Surface Mount D²PAK (TO-263AB), SIPMOS®	View
	BSC080P03LSGAUMA1	Infineon Technologies, P-Channel 30V 16A (Ta), 30A (Tc) 2.5W (Ta), 89W (Tc) Surface Mount PG-TDSON-8-3, OptiMOS™	View
	DMP4013LFG-7	Diodes Incorporated, P-Channel 40V 10.3A (Ta) 1W (Ta) Surface Mount PowerDI3333-8,	View
	BSH205G2R	Nexperia USA Inc., P-Channel 20V 2A (Ta) 480mW (Ta) Surface Mount TO-236AB,	View
	CSD25402Q3A	Texas Instruments, P-Channel 20V 76A (Tc) 2.8W (Ta), 69W (Tc) Surface Mount 8-VSON (3.3x3.3), NexFET™	View
	SQJ431EP-T1_GE3	Vishay Siliconix, P-Channel 200V 12A (Tc) 83W (Tc) Surface Mount PowerPAK® SO-8, Automotive, AEC-Q101, TrenchFET®	View
	RSS070P05FRATB	Rohm Semiconductor, P-Channel 45V 7A (Ta) 2W (Ta) Surface Mount 8-SOP, Automotive, AEC-Q101	View
	DMG3415UFY4Q-7	Diodes Incorporated, P-Channel 16V 2.5A (Ta) 650mW (Ta) Surface Mount X2-DFN2015-3,	View
	DMP4015SSSQ-13	Diodes Incorporated, P-Channel 40V 9.1A (Ta) 1.45W (Ta) Surface Mount 8-SO,	View
	ATP301-TL-H	ON Semiconductor, P-Channel 100V 28A (Ta) 70W (Tc) Surface Mount ATPAK,	View

SIS435DNT-T1-GE3 - Tags

SIS435DNT-T1-GE3 SIS435DNT-T1-GE3 PDF SIS435DNT-T1-GE3 datasheet SIS435DNT-T1-GE3 specification SIS435DNT-T1-GE3 image SIS435DNT-T1-GE3 India Renesas Electronics India SIS435DNT-T1-GE3 buy SIS435DNT-T1-GE3 SIS435DNT-T1-GE3 price SIS435DNT-T1-GE3 distributor SIS435DNT-T1-GE3 supplier SIS435DNT-T1-GE3 wholesales