BSM120D12P2C005

Part NumberBSM120D12P2C005

ManufacturerRohm Semiconductor

DescriptionMOSFET 2N-CH 1200V 120A MODULE

DatasheetBSM120D12P2C005

Package / CaseModule

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Lead TimeTo be Confirmed

Detailed DescriptionMosfet Array 2 N-Channel (Half Bridge) 1200V (1.2kV) 120A (Tc) 780W Module

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BSM120D12P2C005 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays
Datasheet	BSM120D12P2C005
Standard Package	12
Manufacturer	Rohm Semiconductor
Series	-
Packaging	Bulk
Part Status	Active
FET Type	2 N-Channel (Half Bridge)
FET Feature	Silicon Carbide (SiC)
Drain to Source Voltage (Vdss)	1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C	120A (Tc)
Rds On (Max) @ Id, Vgs	-
Vgs(th) (Max) @ Id	2.7V @ 22mA
Gate Charge (Qg) (Max) @ Vgs	-
Input Capacitance (Ciss) (Max) @ Vds	14000pF @ 10V
Power - Max	780W
Operating Temperature	-40°C ~ 150°C (TJ)
Package / Case	Module
Supplier Device Package	Module

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