BSH205G2R
BSH205G2R
Part Number BSH205G2R Description MOSFET P-CH 20V 2A SOT23 Package / Case TO-236-3, SC-59, SOT-23-3Unit Price Request a QuoteLead Time To be ConfirmedDetailed Description P-Channel 20V 2A (Ta) 480mW (Ta) Surface Mount TO-236AB
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BSH205G2R - Product Attributes
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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet BSH205G2 Standard Package 1 Manufacturer Nexperia USA Inc. Series - Packaging Cut Tape (CT) Part Status Active FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 2A (Ta) Drive Voltage (Max Rds On, Min Rds On) 4.5V Rds On (Max) @ Id, Vgs 170mOhm @ 2A, 4.5V Vgs(th) (Max) @ Id 950mV @ 250µA Gate Charge (Qg) (Max) @ Vgs 6.5nC @ 4.5V Vgs (Max) ±8V Input Capacitance (Ciss) (Max) @ Vds 418pF @ 10V FET Feature - Power Dissipation (Max) 480mW (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package TO-236AB Package / Case TO-236-3, SC-59, SOT-23-3
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