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BSC080N03MSGATMA1

BSC080N03MSGATMA1

Part NumberBSC080N03MSGATMA1

ManufacturerInfineon Technologies

DescriptionMOSFET N-CH 30V 53A TDSON-8

DatasheetBSC080N03MS G

Package / Case8-PowerTDFN

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 30V 13A (Ta), 53A (Tc) 2.5W (Ta), 35W (Tc) Surface Mount PG-TDSON-8-5

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BSC080N03MSGATMA1 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	BSC080N03MS G
Standard Package	1
Manufacturer	Infineon Technologies
Series	OptiMOS™
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25°C	13A (Ta), 53A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	8mOhm @ 30A, 10V
Vgs(th) (Max) @ Id	2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	27nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	2100pF @ 15V
FET Feature	-
Power Dissipation (Max)	2.5W (Ta), 35W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PG-TDSON-8-5
Package / Case	8-PowerTDFN

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