Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	BS107P
Standard Package	4000
Manufacturer	Diodes Incorporated
Series	-
Packaging	Bulk
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	200V
Current - Continuous Drain (Id) @ 25°C	120mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)	2.6V, 5V
Rds On (Max) @ Id, Vgs	30Ohm @ 100mA, 5V
Vgs(th) (Max) @ Id	-
Vgs (Max)	±20V
FET Feature	-
Power Dissipation (Max)	500mW (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-92-3
Package / Case	TO-226-3, TO-92-3 (TO-226AA)

VN10LFTA	Diodes Incorporated, N-Channel 60V 150mA (Ta) 330mW (Ta) Surface Mount SOT-23-3,	View
IXFH52N50P2	IXYS, N-Channel 500V 52A (Tc) 960W (Tc) Through Hole TO-247AD (IXFH), HiPerFET™, PolarHV™	View
RCD100N19TL	Rohm Semiconductor, N-Channel 190V 10A (Tc) 850mW (Ta), 20W (Tc) Surface Mount CPT3,	View
IRFZ14SPBF	Vishay Siliconix, N-Channel 60V 10A (Tc) 3.7W (Ta), 43W (Tc) Surface Mount D2PAK,	View
ZXMN4A06GTA	Diodes Incorporated, N-Channel 40V 5A (Ta) 2W (Ta) Surface Mount SOT-223,	View
STB38N65M5	STMicroelectronics, N-Channel 650V 30A (Tc) 190W (Tc) Surface Mount D2PAK, MDmesh™ V	View
IPP126N10N3GXKSA1	Infineon Technologies, N-Channel 100V 58A (Tc) 94W (Tc) Through Hole PG-TO220-3, OptiMOS™	View
TSM60NB380CP ROG	Taiwan Semiconductor Corporation, N-Channel 600V 9.5A (Tc) 83W (Tc) Surface Mount TO-252, (D-Pak),	View
SPP07N60C3XKSA1	Infineon Technologies, N-Channel 650V 7.3A (Tc) 83W (Tc) Through Hole PG-TO220-3-1, CoolMOS™	View
STP260N6F6	STMicroelectronics, N-Channel 60V 120A (Tc) 300W (Tc) Through Hole TO-220, DeepGATE™, STripFET™ VI	View
SIS406DN-T1-GE3	Vishay Siliconix, N-Channel 30V 9A (Ta) 1.5W (Ta) Surface Mount PowerPAK® 1212-8, TrenchFET®	View
DN3545N3-G	Microchip Technology, N-Channel 450V 136mA 740mW (Ta) Through Hole TO-92 (TO-226),	View

BS107P

Part NumberBS107P