Categories	Discrete Semiconductor Products / Transistors - Bipolar (BJT) - RF
Datasheet	MT3S113P
Standard Package	1000
Manufacturer	Toshiba Semiconductor and Storage
Series	-
Packaging	Tape & Reel (TR)
Part Status	Active
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	5.3V
Frequency - Transition	7.7GHz
Noise Figure (dB Typ @ f)	1.45dB @ 1GHz
Gain	10.5dB
Power - Max	1.6W
DC Current Gain (hFE) (Min) @ Ic, Vce	200 @ 30mA, 5V
Current - Collector (Ic) (Max)	100mA
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Package / Case	TO-243AA
Supplier Device Package	PW-MINI

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2SC5245A-4-TL-E	ON Semiconductor, RF Transistor NPN 10V 30mA 8GHz 150mW Surface Mount 3-MCP,	View
BFP193E6327HTSA1	Infineon Technologies, RF Transistor NPN 12V 80mA 8GHz 580mW Surface Mount PG-SOT143-4,	View
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MT3S113P(TE12L,F)

Part NumberMT3S113P(TE12L,F)