Categories	Discrete Semiconductor Products / Transistors - IGBTs - Single
Datasheet	APT35GN120B(G)
Standard Package	1
Manufacturer	Microsemi Corporation
Series	-
Packaging	Tube
Part Status	Active
IGBT Type	NPT, Trench Field Stop
Voltage - Collector Emitter Breakdown (Max)	1200V
Current - Collector (Ic) (Max)	94A
Current - Collector Pulsed (Icm)	105A
Vce(on) (Max) @ Vge, Ic	2.1V @ 15V, 35A
Power - Max	379W
Switching Energy	2.315mJ (off)
Input Type	Standard
Gate Charge	220nC
Td (on/off) @ 25°C	24ns/300ns
Test Condition	800V, 35A, 2.2Ohm, 15V
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-247-3
Supplier Device Package	TO-247 [B]

IRGB30B60KPBF	Infineon Technologies, IGBT NPT 600V 78A 370W Through Hole TO-220AB,	View
FGA15N120ANTDTU-F109	ON Semiconductor, IGBT NPT and Trench 1200V 30A 186W Through Hole TO-3P,	View
STGWA40M120DF3	STMicroelectronics, IGBT Trench Field Stop 1200V 80A 468W Through Hole TO-247,	View
IXYX25N250CV1HV	IXYS, IGBT 2500V 95A 937W Through Hole PLUS247™-3, XPT™	View
NGTG40N120FL2WG	ON Semiconductor, IGBT Trench Field Stop 1200V 80A 535W Through Hole TO-247-3,	View
RGW60TS65GC11	Rohm Semiconductor, IGBT Trench Field Stop 650V 60A 178W Through Hole TO-247N,	View
DGTD65T15H2TF	Diodes Incorporated, IGBT Field Stop 650V 30A 48W Through Hole ITO-220AB,	View
FGL40N120ANDTU	ON Semiconductor, IGBT NPT 1200V 64A 500W Through Hole TO-264-3,	View
APT25GN120SG	Microsemi Corporation, IGBT Trench Field Stop 1200V 67A 272W Surface Mount D3Pak,	View
IXBX50N360HV	IXYS, IGBT 3600V 125A 660W Through Hole TO-247PLUS-HV, BIMOSFET™	View
APT33GF120B2RDQ2G	Microsemi Corporation, IGBT NPT 1200V 64A 357W Through Hole,	View
IHW20N65R5XKSA1	Infineon Technologies, IGBT 650V 40A 150W Through Hole PG-TO247-3, TrenchStop®	View

APT35GN120BG

Part NumberAPT35GN120BG