APT34N80B2C3G
APT34N80B2C3G
Part Number APT34N80B2C3G Description MOSFET N-CH 800V 34A T-MAX Package / Case TO-247-3 VariantUnit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 800V 34A (Tc) 417W (Tc) Through Hole T-MAX™ [B2]
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APT34N80B2C3G - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet APT34N80(B2,L)C3 Standard Package 1 Manufacturer Microsemi Corporation Series - Packaging Tube Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 800V Current - Continuous Drain (Id) @ 25°C 34A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 145mOhm @ 22A, 10V Vgs(th) (Max) @ Id 3.9V @ 2mA Gate Charge (Qg) (Max) @ Vgs 355nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 4510pF @ 25V FET Feature - Power Dissipation (Max) 417W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package T-MAX™ [B2] Package / Case TO-247-3 Variant
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