APT34N80B2C3G

Part NumberAPT34N80B2C3G

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Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	APT34N80(B2,L)C3
Standard Package	1
Manufacturer	Microsemi Corporation
Series	-
Packaging	Tube
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	800V
Current - Continuous Drain (Id) @ 25°C	34A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	145mOhm @ 22A, 10V
Vgs(th) (Max) @ Id	3.9V @ 2mA
Gate Charge (Qg) (Max) @ Vgs	355nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	4510pF @ 25V
FET Feature	-
Power Dissipation (Max)	417W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	T-MAX™ [B2]
Package / Case	TO-247-3 Variant

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IRFS7734TRL7PP	Infineon Technologies, N-Channel 75V 197A (Tc) 294W (Tc) Surface Mount D2PAK (7-Lead), HEXFET®, StrongIRFET™	View
SQJ486EP-T1_GE3	Vishay Siliconix, N-Channel 75V 30A (Tc) 56W (Tc) Surface Mount PowerPAK® SO-8, Automotive, AEC-Q101, TrenchFET®	View
IRF640STRLPBF	Vishay Siliconix, N-Channel 200V 18A (Tc) 3.1W (Ta), 130W (Tc) Surface Mount TO-263 (D²Pak),	View
TSM150NB04LCR RLG	Taiwan Semiconductor Corporation, N-Channel 40V 10A (Ta), 41A (Tc) 3.1W (Ta), 56W (Tc) Surface Mount 8-PDFN (5x6),	View
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SQP10250E_GE3	Vishay Siliconix, N-Channel 250V 53A (Tc) 250W (Tc) Through Hole TO-220AB, Automotive, AEC-Q101, TrenchFET®	View
BUK763R4-30B,118	Nexperia USA Inc., N-Channel 30V 75A (Tc) 255W (Tc) Surface Mount D2PAK, Automotive, AEC-Q101, TrenchMOS™	View
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