APT34N80B2C3G


APT34N80B2C3G

Part NumberAPT34N80B2C3G

Manufacturer

Description

Datasheet

Package / CaseTO-247-3 Variant

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed Description

APT34N80B2C3G - Product Attributes

Categories Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet
Standard Package1
ManufacturerMicrosemi Corporation
Series-
PackagingTube
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)800V
Current - Continuous Drain (Id) @ 25°C34A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs145mOhm @ 22A, 10V
Vgs(th) (Max) @ Id3.9V @ 2mA
Gate Charge (Qg) (Max) @ Vgs355nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds4510pF @ 25V
FET Feature-
Power Dissipation (Max)417W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageT-MAX™ [B2]
Package / CaseTO-247-3 Variant

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APT34N80B2C3G - Tags

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