Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ APT34N80B2C3G

APT34N80B2C3G

APT34N80B2C3G

Part NumberAPT34N80B2C3G

ManufacturerMicrosemi Corporation

DescriptionMOSFET N-CH 800V 34A T-MAX

DatasheetAPT34N80(B2,L)C3

Package / CaseTO-247-3 Variant

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 800V 34A (Tc) 417W (Tc) Through Hole T-MAX™ [B2]

To learn about the specification of APT34N80B2C3G, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add APT34N80B2C3G with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of APT34N80B2C3G.
We are offering APT34N80B2C3G for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

APT34N80B2C3G - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	APT34N80(B2,L)C3
Standard Package	1
Manufacturer	Microsemi Corporation
Series	-
Packaging	Tube
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	800V
Current - Continuous Drain (Id) @ 25°C	34A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	145mOhm @ 22A, 10V
Vgs(th) (Max) @ Id	3.9V @ 2mA
Gate Charge (Qg) (Max) @ Vgs	355nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	4510pF @ 25V
FET Feature	-
Power Dissipation (Max)	417W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	T-MAX™ [B2]
Package / Case	TO-247-3 Variant

APT34N80B2C3G - Related Products

	PSMN027-100BS,118	Nexperia USA Inc., N-Channel 100V 37A (Tc) 103W (Tc) Surface Mount D2PAK,	View
	IPP114N12N3GXKSA1	Infineon Technologies, N-Channel 120V 75A (Tc) 136W (Tc) Through Hole PG-TO220-3, OptiMOS™	View
	ZVN2106A	Diodes Incorporated, N-Channel 60V 450mA (Ta) 700mW (Ta) Through Hole TO-92-3,	View
	SI7192DP-T1-GE3	Vishay Siliconix, N-Channel 30V 60A (Tc) 6.25W (Ta), 104W (Tc) Surface Mount PowerPAK® SO-8, TrenchFET®	View
	SI7892BDP-T1-GE3	Vishay Siliconix, N-Channel 30V 15A (Ta) 1.8W (Ta) Surface Mount PowerPAK® SO-8, TrenchFET®	View
	DMN10H700S-7	Diodes Incorporated, N-Channel 100V 700mA (Ta) 400mW (Ta) Surface Mount SOT-23, Automotive, AEC-Q101	View
	IPI045N10N3GXKSA1	Infineon Technologies, N-Channel 100V 100A (Tc) 214W (Tc) Through Hole PG-TO262-3, OptiMOS™	View
	FQP3N50C-F080	ON Semiconductor, N-Channel 500V 1.8A (Tc) 62W (Tc) Through Hole TO-220-3,	View
	IPD60R600P6ATMA1	Infineon Technologies, N-Channel 600V 7.3A (Tc) 63W (Tc) Surface Mount PG-TO252-3, CoolMOS™ P6	View
	SIR610DP-T1-RE3	Vishay Siliconix, N-Channel 200V 35.4A (Tc) 104W (Tc) Surface Mount PowerPAK® SO-8, ThunderFET®	View
	BUK7620-100A,118	Nexperia USA Inc., N-Channel 100V 63A (Tc) 200W (Tc) Surface Mount D2PAK, Automotive, AEC-Q101, TrenchMOS™	View
	STL7N6LF3	STMicroelectronics, N-Channel 60V 20A (Tc) 4.3W (Ta), 52W (Tc) Surface Mount PowerFlat™ (5x6), Automotive, AEC-Q101, STripFET™ F3	View

APT34N80B2C3G - Tags

APT34N80B2C3G APT34N80B2C3G PDF APT34N80B2C3G datasheet APT34N80B2C3G specification APT34N80B2C3G image APT34N80B2C3G India Renesas Electronics India APT34N80B2C3G buy APT34N80B2C3G APT34N80B2C3G price APT34N80B2C3G distributor APT34N80B2C3G supplier APT34N80B2C3G wholesales