Categories	Discrete Semiconductor Products / Transistors - IGBTs - Single
Datasheet	RGTV60TS65
Standard Package	450
Manufacturer	Rohm Semiconductor
Series	-
Part Status	Active
IGBT Type	Trench Field Stop
Voltage - Collector Emitter Breakdown (Max)	650V
Current - Collector (Ic) (Max)	60A
Current - Collector Pulsed (Icm)	120A
Vce(on) (Max) @ Vge, Ic	1.9V @ 15V, 30A
Power - Max	194W
Switching Energy	570µJ (on), 500µJ (off)
Input Type	Standard
Gate Charge	64nC
Td (on/off) @ 25°C	33ns/105ns
Test Condition	400V, 30A, 10Ohm, 15V
Operating Temperature	-40°C ~ 175°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-247-3
Supplier Device Package	TO-247N

FGP20N60UFDTU	ON Semiconductor, IGBT Field Stop 600V 40A 165W Through Hole TO-220-3,	View
STGFW30H65FB	STMicroelectronics, IGBT Trench Field Stop 650V 60A 58W Through Hole TO-3PF-3,	View
IXYH82N120C3	IXYS, IGBT 1200V 200A 1250W Through Hole TO-247 (IXYH), GenX3™, XPT™	View
STGWA40M120DF3	STMicroelectronics, IGBT Trench Field Stop 1200V 80A 468W Through Hole TO-247,	View
HGTG20N60A4D	ON Semiconductor, IGBT 600V 70A 290W Through Hole TO-247-3,	View
STGD5H60DF	STMicroelectronics, IGBT Trench Field Stop 600V 10A 83W Surface Mount DPAK,	View
STGD3HF60HDT4	STMicroelectronics, IGBT 600V 7.5A 38W Surface Mount DPAK,	View
FGH75T65SHDT-F155	ON Semiconductor, IGBT Trench Field Stop 650V 150A 455W Through Hole TO-247,	View
STGF10M65DF2	STMicroelectronics, IGBT Trench Field Stop 650V 20A 30W Through Hole TO-220FP,	View
RGCL80TS60DGC11	Rohm Semiconductor, IGBT Trench Field Stop 600V 65A 148W Through Hole TO-247N,	View
IXBX25N250	IXYS, IGBT 2500V 55A 300W Through Hole PLUS247™-3, BIMOSFET™	View
IKZ50N65NH5XKSA1	Infineon Technologies, IGBT Trench 650V 85A 273W Through Hole PG-TO247-4, TrenchStop™ 5	View

RGTV60TS65GC11

Part NumberRGTV60TS65GC11