AOD4S60
AOD4S60
Part Number AOD4S60
Description MOSFET N-CH 600V 4A TO252
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Unit Price Request a Quote
Lead Time To be Confirmed
Detailed Description N-Channel 600V 4A (Tc) 56.8W (Tc) Surface Mount TO-252, (D-Pak)
To learn about the specification of AOD4S60, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add AOD4S60 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of AOD4S60.
We are offering AOD4S60 for competitive price in the global market, please send us a quota request for pricing. Thank you!
Payment Methods
Delivery Services
AOD4S60 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet AOD4S60/AOI4S60
Standard Package 1
Manufacturer Alpha & Omega Semiconductor Inc.
Series aMOS™
Packaging Cut Tape (CT)
Part Status Not For New Designs
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600V
Current - Continuous Drain (Id) @ 25°C 4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 900mOhm @ 2A, 10V
Vgs(th) (Max) @ Id 4.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 6nC @ 10V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 263pF @ 100V
FET Feature -
Power Dissipation (Max) 56.8W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-252, (D-Pak)
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
IRFSL3006PBF
Infineon Technologies, N-Channel 60V 195A (Tc) 375W (Tc) Through Hole TO-262, HEXFET®
View
PSMN7R0-30MLC,115
Nexperia USA Inc., N-Channel 30V 67A (Tc) 57W (Tc) Surface Mount LFPAK33,
View
FQD18N20V2TM
ON Semiconductor, N-Channel 200V 15A (Tc) 2.5W (Ta), 83W (Tc) Surface Mount D-Pak, QFET®
View
R6004KNX
Rohm Semiconductor, N-Channel 600V 4A (Tc) 40W (Tc) Through Hole TO-220FM,
View
FDP3672
ON Semiconductor, N-Channel 105V 5.9A (Ta), 41A (Tc) 135W (Tc) Through Hole TO-220-3, PowerTrench®
View
IRFP3710PBF
Infineon Technologies, N-Channel 100V 57A (Tc) 200W (Tc) Through Hole TO-247AC, HEXFET®
View
FDS6699S
ON Semiconductor, N-Channel 30V 21A (Ta) 2.5W (Ta) Surface Mount 8-SOIC, PowerTrench®, SyncFET™
View
RE1L002SNTL
Rohm Semiconductor, N-Channel 60V 250mA (Ta) 150mW (Ta) Surface Mount EMT3F (SOT-416FL),
View
PSMN3R0-60ES,127
Nexperia USA Inc., N-Channel 60V 100A (Tc) 306W (Tc) Through Hole I2PAK,
View
SI1012X-T1-GE3
Vishay Siliconix, N-Channel 20V 500mA (Ta) 250mW (Ta) Surface Mount SC-89-3, TrenchFET®
View
TSM240N03CX RFG
Taiwan Semiconductor Corporation, N-Channel 30V 6.5A (Tc) 1.56W (Tc) Surface Mount SOT-23,
View
IPP086N10N3GXKSA1
Infineon Technologies, N-Channel 100V 80A (Tc) 125W (Tc) Through Hole PG-TO220-3, OptiMOS™
View
AOD4S60 - Tags