IPP086N10N3GXKSA1
IPP086N10N3GXKSA1
Part Number IPP086N10N3GXKSA1 Description MOSFET N-CH 100V 80A TO220-3 Package / Case TO-220-3Unit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 100V 80A (Tc) 125W (Tc) Through Hole PG-TO220-3
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IPP086N10N3GXKSA1 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet IPx08xN10N3 G Standard Package 500 Manufacturer Infineon Technologies Series OptiMOS™ Packaging Tube Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 80A (Tc) Drive Voltage (Max Rds On, Min Rds On) 6V, 10V Rds On (Max) @ Id, Vgs 8.6mOhm @ 73A, 10V Vgs(th) (Max) @ Id 3.5V @ 75µA Gate Charge (Qg) (Max) @ Vgs 55nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 3980pF @ 50V FET Feature - Power Dissipation (Max) 125W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Supplier Device Package PG-TO220-3 Package / Case TO-220-3
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IPP086N10N3GXKSA1 - Tags
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