2SD2016
2SD2016
Part Number 2SD2016 Description TRANS NPN DARL 200V 3A TO220F Package / Case TO-220-3 Full PackUnit Price Request a QuoteLead Time To be ConfirmedDetailed Description Bipolar (BJT) Transistor NPN - Darlington 200V 3A 90MHz 25W Through Hole TO-220F
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2SD2016 - Product Attributes
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Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Datasheet 2SD2016 Standard Package 50 Manufacturer Sanken Series - Packaging Bulk Part Status Active Transistor Type NPN - Darlington Current - Collector (Ic) (Max) 3A Voltage - Collector Emitter Breakdown (Max) 200V Vce Saturation (Max) @ Ib, Ic 1.5V @ 1.5mA, 1A Current - Collector Cutoff (Max) 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce 1000 @ 1A, 4V Power - Max 25W Frequency - Transition 90MHz Operating Temperature 150°C (TJ) Mounting Type Through Hole Package / Case TO-220-3 Full Pack Supplier Device Package TO-220F
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2SC2712-OTE85LF Toshiba Semiconductor and Storage, Bipolar (BJT) Transistor NPN 50V 150mA 80MHz 150mW Surface Mount TO-236,
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MMBT6427LT1G ON Semiconductor, Bipolar (BJT) Transistor NPN - Darlington 40V 500mA 225mW Surface Mount SOT-23-3 (TO-236),
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BUL381D STMicroelectronics, Bipolar (BJT) Transistor NPN 400V 5A 70W Through Hole TO-220AB,
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2N4401TF ON Semiconductor, Bipolar (BJT) Transistor NPN 40V 600mA 250MHz 625mW Through Hole TO-92-3,
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2SC4518 Sanken, Bipolar (BJT) Transistor NPN 550V 5A 6MHz 35W Through Hole TO-220F,
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2SD2016 - Tags
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