2N5550TFR


2N5550TFR

Part Number2N5550TFR

Manufacturer

Description

Datasheet

Package / CaseTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed Description

2N5550TFR - Product Attributes

Categories Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Datasheet
Standard Package1
ManufacturerON Semiconductor
Series-
PackagingCut Tape (CT)
Part StatusActive
Transistor TypeNPN
Current - Collector (Ic) (Max)600mA
Voltage - Collector Emitter Breakdown (Max)140V
Vce Saturation (Max) @ Ib, Ic250mV @ 5mA, 50mA
Current - Collector Cutoff (Max)100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce60 @ 10mA, 5V
Power - Max625mW
Frequency - Transition300MHz
Operating Temperature150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device PackageTO-92-3
Base Part Number2N5550

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2N5550TFR - Tags

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