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2SC5200N(S1,E,S)


2SC5200N(S1,E,S)

Part Number2SC5200N(S1,E,S)

Manufacturer

Description

Datasheet

Package / CaseTO-3P-3, SC-65-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed Description

2SC5200N(S1,E,S) - Product Attributes

Categories Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Datasheet
Standard Package25
ManufacturerToshiba Semiconductor and Storage
Series-
PackagingTube
Part StatusActive
Transistor TypeNPN
Current - Collector (Ic) (Max)15A
Voltage - Collector Emitter Breakdown (Max)230V
Vce Saturation (Max) @ Ib, Ic3V @ 800mA, 8A
Current - Collector Cutoff (Max)5µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce80 @ 1A, 5V
Power - Max150W
Frequency - Transition30MHz
Operating Temperature150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-3P-3, SC-65-3
Supplier Device PackageTO-3P(N)

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2SC5200N(S1,E,S) - Tags

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