2SD2017
2SD2017
Part Number 2SD2017 Description TRANS NPN DARL 250V 6A TO220F Package / Case TO-220-3 Full PackUnit Price Request a QuoteLead Time To be ConfirmedDetailed Description Bipolar (BJT) Transistor NPN - Darlington 250V 6A 20MHz 35W Through Hole TO-220F
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2SD2017 - Product Attributes
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Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Datasheet 2SD2017 Standard Package 50 Manufacturer Sanken Series - Packaging Bulk Part Status Active Transistor Type NPN - Darlington Current - Collector (Ic) (Max) 6A Voltage - Collector Emitter Breakdown (Max) 250V Vce Saturation (Max) @ Ib, Ic 1.5V @ 2mA, 2A Current - Collector Cutoff (Max) 100µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce 2000 @ 2A, 2V Power - Max 35W Frequency - Transition 20MHz Operating Temperature 150°C (TJ) Mounting Type Through Hole Package / Case TO-220-3 Full Pack Supplier Device Package TO-220F
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MMBT3904-HF Comchip Technology, Bipolar (BJT) Transistor NPN 40V 200mA 300MHz 200mW Surface Mount SOT-23,
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2SC2713-BL,LF Toshiba Semiconductor and Storage, Bipolar (BJT) Transistor NPN 120V 100mA 100MHz 150mW Surface Mount TO-236,
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