Categories	Discrete Semiconductor Products / Transistors - Bipolar (BJT) - RF
Datasheet	2SC5065
Standard Package	1
Manufacturer	Toshiba Semiconductor and Storage
Series	-
Packaging	Cut Tape (CT)
Part Status	Active
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	12V
Frequency - Transition	7GHz
Noise Figure (dB Typ @ f)	1.1dB @ 1GHz
Gain	12dB ~ 17dB
Power - Max	100mW
DC Current Gain (hFE) (Min) @ Ic, Vce	120 @ 10mA, 5V
Current - Collector (Ic) (Max)	30mA
Operating Temperature	125°C (TJ)
Mounting Type	Surface Mount
Package / Case	SC-70, SOT-323
Supplier Device Package	USM

BFP740H6327XTSA1	Infineon Technologies, RF Transistor NPN 4.7V 30mA 42GHz 160mW Surface Mount SOT-343,	View
2SC5087YTE85LF	Toshiba Semiconductor and Storage, RF Transistor NPN 12V 80mA 7GHz 150mW Surface Mount SMQ,	View
BFR193E6327HTSA1	Infineon Technologies, RF Transistor NPN 12V 80mA 8GHz 580mW Surface Mount SOT-23-3,	View
BFR340FH6327XTSA1	Infineon Technologies, RF Transistor NPN 9V 20mA 14GHz 75mW Surface Mount PG-TSFP-3,	View
BFP540ESDH6327XTSA1	Infineon Technologies, RF Transistor NPN 5V 80mA 30GHz 250mW Surface Mount PG-SOT343-4,	View
MMBT5179	ON Semiconductor, RF Transistor NPN 12V 50mA 2GHz 225mW Surface Mount SOT-23-3 (TO-236),	View
MT3S113P(TE12L,F)	Toshiba Semiconductor and Storage, RF Transistor NPN 5.3V 100mA 7.7GHz 1.6W Surface Mount PW-MINI,	View
MCH4009-TL-H	ON Semiconductor, RF Transistor NPN 3.5V 40mA 25GHz 120mW Surface Mount 4-MCPH,	View
BFP620FH7764XTSA1	Infineon Technologies, RF Transistor NPN 2.8V 80mA 65GHz 185mW Surface Mount 4-TSFP,	View
2SC5085-Y(TE85L,F)	Toshiba Semiconductor and Storage, RF Transistor NPN 12V 80mA 7GHz 100mW Surface Mount USM,	View
MT3S16U(TE85L,F)	Toshiba Semiconductor and Storage, RF Transistor NPN 5V 60mA 4GHz 100mW Surface Mount USM,	View
MAPR-000912-500S00	M/A-Com Technology Solutions, RF Transistor NPN 80V 52.5A 500W Chassis Mount,	View

2SC5065-Y(TE85L,F)

Part Number2SC5065-Y(TE85L,F)