Categories	Discrete Semiconductor Products / Transistors - Bipolar (BJT) - RF
Datasheet	2SC4915
Standard Package	3000
Manufacturer	Toshiba Semiconductor and Storage
Series	-
Packaging	Tape & Reel (TR)
Part Status	Active
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	30V
Frequency - Transition	550MHz
Noise Figure (dB Typ @ f)	2.3dB ~ 5dB @ 100MHz
Gain	17dB ~ 23dB
Power - Max	100mW
DC Current Gain (hFE) (Min) @ Ic, Vce	70 @ 1mA, 6V
Current - Collector (Ic) (Max)	20mA
Operating Temperature	125°C (TJ)
Mounting Type	Surface Mount
Package / Case	SC-75, SOT-416
Supplier Device Package	SSM

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BFR360FH6327XTSA1	Infineon Technologies, RF Transistor NPN 9V 35mA 14GHz 210mW Surface Mount PG-TSFP-3,	View
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BFU580GX	NXP USA Inc., RF Transistor NPN 12V 60mA 11GHz 1W Surface Mount SOT-223,	View
2SC5084-O(TE85L,F)	Toshiba Semiconductor and Storage, RF Transistor NPN 12V 80mA 7GHz 150mW Surface Mount S-Mini,	View
2SC5087YTE85LF	Toshiba Semiconductor and Storage, RF Transistor NPN 12V 80mA 7GHz 150mW Surface Mount SMQ,	View
BFR840L3RHESDE6327XTSA1	Infineon Technologies, RF Transistor NPN 2.6V 35mA 75GHz 75mW Surface Mount PG-TSLP-3,	View
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MCH4015-TL-H	ON Semiconductor, RF Transistor NPN 12V 100mA 10GHz 450mW Surface Mount 4-MCPH,	View

2SC4915-O,LF

Part Number2SC4915-O,LF