Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ 2N7002ET1G

2N7002ET1G

2N7002ET1G

Part Number2N7002ET1G

ManufacturerON Semiconductor

DescriptionMOSFET N-CH 60V 260MA SOT-23

Datasheet2N7002E Datasheet

Package / CaseTO-236-3, SC-59, SOT-23-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 60V 260mA (Ta) 300mW (Tj) Surface Mount SOT-23-3 (TO-236)

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2N7002ET1G - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	2N7002E Datasheet
Standard Package	1
Manufacturer	ON Semiconductor
Series	-
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25°C	260mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	2.5Ohm @ 240mA, 10V
Vgs(th) (Max) @ Id	2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	0.81nC @ 5V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	26.7pF @ 25V
FET Feature	-
Power Dissipation (Max)	300mW (Tj)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	SOT-23-3 (TO-236)
Package / Case	TO-236-3, SC-59, SOT-23-3

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