CSD16411Q3
CSD16411Q3
Part Number CSD16411Q3
Description MOSFET N-CH 25V 56A 8-SON
Package / Case 8-PowerVDFN
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Lead Time To be Confirmed
Detailed Description N-Channel 25V 14A (Ta), 56A (Tc) 2.7W (Ta) Surface Mount 8-VSON (3.3x3.3)
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CSD16411Q3 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet CSD16411Q3
Standard Package 2500
Manufacturer Texas Instruments
Series NexFET™
Packaging Tape & Reel (TR)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 25V
Current - Continuous Drain (Id) @ 25°C 14A (Ta), 56A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 10mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 2.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 3.8nC @ 4.5V
Vgs (Max) +16V, -12V
Input Capacitance (Ciss) (Max) @ Vds 570pF @ 12.5V
FET Feature -
Power Dissipation (Max) 2.7W (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 8-VSON (3.3x3.3)
Package / Case 8-PowerVDFN
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