2N6667G


2N6667G

Part Number2N6667G

Manufacturer

Description

Datasheet

Package / CaseTO-220-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed Description

2N6667G - Product Attributes

Categories Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Datasheet
Standard Package50
ManufacturerON Semiconductor
Series-
PackagingTube
Part StatusActive
Transistor TypePNP - Darlington
Current - Collector (Ic) (Max)10A
Voltage - Collector Emitter Breakdown (Max)60V
Vce Saturation (Max) @ Ib, Ic3V @ 100mA, 10A
Current - Collector Cutoff (Max)1mA
DC Current Gain (hFE) (Min) @ Ic, Vce1000 @ 5A, 3V
Power - Max2W
Frequency - Transition-
Operating Temperature-65°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-220-3
Supplier Device PackageTO-220AB
Base Part Number2N6667

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2N6667G - Tags

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