2N6667G
2N6667G
Part Number 2N6667G Description TRANS PNP DARL 60V 10A TO220AB Package / Case TO-220-3Unit Price Request a QuoteLead Time To be ConfirmedDetailed Description Bipolar (BJT) Transistor PNP - Darlington 60V 10A 2W Through Hole TO-220AB
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2N6667G - Product Attributes
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Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Datasheet 2N6667,2N6668 Standard Package 50 Manufacturer ON Semiconductor Series - Packaging Tube Part Status Active Transistor Type PNP - Darlington Current - Collector (Ic) (Max) 10A Voltage - Collector Emitter Breakdown (Max) 60V Vce Saturation (Max) @ Ib, Ic 3V @ 100mA, 10A Current - Collector Cutoff (Max) 1mA DC Current Gain (hFE) (Min) @ Ic, Vce 1000 @ 5A, 3V Power - Max 2W Frequency - Transition - Operating Temperature -65°C ~ 150°C (TJ) Mounting Type Through Hole Package / Case TO-220-3 Supplier Device Package TO-220AB Base Part Number 2N6667
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BSR31,135 Nexperia USA Inc., Bipolar (BJT) Transistor PNP 60V 1A 100MHz 1.35W Surface Mount SOT-89,
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BC856BW-G Comchip Technology, Bipolar (BJT) Transistor PNP 65V 100mA 100MHz 150mW Surface Mount SOT-323,
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BC860CW,115 Nexperia USA Inc., Bipolar (BJT) Transistor PNP 45V 100mA 100MHz 200mW Surface Mount SC-70, Automotive, AEC-Q101
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2DA1797-13 Diodes Incorporated, Bipolar (BJT) Transistor PNP 50V 3A 160MHz 900mW Surface Mount SOT-89-3,
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PBSS5612PA,115 Nexperia USA Inc., Bipolar (BJT) Transistor PNP 12V 6A 60MHz 2.1W Surface Mount 3-HUSON (2x2),
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ZXTP2008ZTA Diodes Incorporated, Bipolar (BJT) Transistor PNP 30V 5.5A 110MHz 2.1W Surface Mount SOT-89-3,
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ZXTP19020DGTA Diodes Incorporated, Bipolar (BJT) Transistor PNP 20V 8A 176MHz 3W Surface Mount SOT-223,
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2SA1593T-TL-E ON Semiconductor, Bipolar (BJT) Transistor PNP 100V 2A 120MHz 1W Surface Mount 2-TP-FA,
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