2N6667G
2N6667G
Part Number 2N6667G Description TRANS PNP DARL 60V 10A TO220AB Package / Case TO-220-3Unit Price Request a QuoteLead Time To be ConfirmedDetailed Description Bipolar (BJT) Transistor PNP - Darlington 60V 10A 2W Through Hole TO-220AB
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2N6667G - Product Attributes
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Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Datasheet 2N6667,2N6668 Standard Package 50 Manufacturer ON Semiconductor Series - Packaging Tube Part Status Active Transistor Type PNP - Darlington Current - Collector (Ic) (Max) 10A Voltage - Collector Emitter Breakdown (Max) 60V Vce Saturation (Max) @ Ib, Ic 3V @ 100mA, 10A Current - Collector Cutoff (Max) 1mA DC Current Gain (hFE) (Min) @ Ic, Vce 1000 @ 5A, 3V Power - Max 2W Frequency - Transition - Operating Temperature -65°C ~ 150°C (TJ) Mounting Type Through Hole Package / Case TO-220-3 Supplier Device Package TO-220AB Base Part Number 2N6667
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PBSS5160V,115 Nexperia USA Inc., Bipolar (BJT) Transistor PNP 60V 900mA 220MHz 500mW Surface Mount SOT-666,
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PBHV9115Z,115 Nexperia USA Inc., Bipolar (BJT) Transistor PNP 150V 1A 115MHz 1.4W Surface Mount SC-73,
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FMBM5401 ON Semiconductor, Bipolar (BJT) Transistor PNP 150V 600mA 300MHz 700mW Surface Mount SuperSOT™-6,
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2SA1163-BL,LF Toshiba Semiconductor and Storage, Bipolar (BJT) Transistor PNP 120V 100mA 100MHz 150mW Surface Mount S-Mini,
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SST2907AT116 Rohm Semiconductor, Bipolar (BJT) Transistor PNP 60V 600mA 200MHz 350mW Surface Mount SST3,
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