2DB1132R-13


2DB1132R-13

Part Number2DB1132R-13

Manufacturer

Description

Datasheet

Package / CaseTO-243AA

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed Description

2DB1132R-13 - Product Attributes

Categories Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Datasheet
Standard Package1
ManufacturerDiodes Incorporated
Series-
PackagingCut Tape (CT)
Part StatusActive
Transistor TypePNP
Current - Collector (Ic) (Max)1A
Voltage - Collector Emitter Breakdown (Max)32V
Vce Saturation (Max) @ Ib, Ic500mV @ 50mA, 500mA
Current - Collector Cutoff (Max)500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce180 @ 100mA, 3V
Power - Max1W
Frequency - Transition190MHz
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / CaseTO-243AA
Supplier Device PackageSOT-89-3
Base Part Number2DB1132

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2DB1132R-13 - Tags

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