2N3585
2N3585
Part Number 2N3585 Description TRANS NPN 300V 2A TO-66 Package / Case TO-213AA, TO-66-2Unit Price Request a QuoteLead Time To be ConfirmedDetailed Description Bipolar (BJT) Transistor NPN 300V 2A 10MHz 35W Through Hole TO-66
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2N3585 - Product Attributes
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Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Datasheet 2N3583 thru 2N3585 Standard Package 30 Manufacturer Central Semiconductor Corp Series - Packaging Tube Part Status Active Transistor Type NPN Current - Collector (Ic) (Max) 2A Voltage - Collector Emitter Breakdown (Max) 300V Vce Saturation (Max) @ Ib, Ic 750mV @ 125mA, 1A Current - Collector Cutoff (Max) 5mA DC Current Gain (hFE) (Min) @ Ic, Vce 25 @ 1A, 10V Power - Max 35W Frequency - Transition 10MHz Operating Temperature -65°C ~ 200°C (TJ) Mounting Type Through Hole Package / Case TO-213AA, TO-66-2 Supplier Device Package TO-66
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MMSTA14-7-F Diodes Incorporated, Bipolar (BJT) Transistor NPN - Darlington 30V 300mA 125MHz 200mW Surface Mount SOT-323,
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BCX55TA Diodes Incorporated, Bipolar (BJT) Transistor NPN 60V 1A 150MHz 1W Surface Mount SOT-89,
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2SC4725TLP Rohm Semiconductor, Bipolar (BJT) Transistor NPN 20V 50mA 1.5GHz 150mW Surface Mount EMT3,
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2SD2142KT146 Rohm Semiconductor, Bipolar (BJT) Transistor NPN - Darlington 30V 300mA 200MHz 200mW Surface Mount SMT3,
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